Design And Implementation Of Pre-Read And Write Circuit For Phase Change Memory Array

As a non-volatile storage device with tremendous potential for development,Phase Change Memory has been rapidly developed in recent years due to its advantages of low power consumption,high speed,multi-value storage and compatibility with CMOS technology.It utilizes the difference in resistance values of the phase change material in different states of crystallization and amorphization to store different data.Reducing the size of the memory cells in phase change memory is the main method to increase the memory density.However,increasing the memory density needs to cope with the phenomenon of thermal crosstalk between phase change memory cells.In the meantime,when the phase change memory cell is normally operated,this operation will cause repeated operation.It is necessary to propose a solution that can effectively reduce the number of repeated operation,and reduce the thermal crosstalk interference phase change memory.This paper presents a pre-read and write programs,through the pre-read and write operations to avoid duplication of repeated operation,the erasing process using pulse width modulation and amplitude modulation circuit to avoid over-erasing,which can effectively reduce thermal crosstalk.In this paper,the experimental platform of pre-reading and writing circuit system is set up by modularization design.The circuit which can pre-read and write the phase-change memory array is designed and the pre-reading and writing scheme of phase-change memory array is realized.The entire pre-read-write circuit system consists of pre-read and write circuit master module,power module,semiconductor analyzer module,lower computer module,phase change memory array circuit module.Pre-read and write control circuit and lower computer module which based on a programmable microcontroller,which enhanced the flexibility of read-write program.Based on the pre-read-write circuit system in this paper,this paper uses the simulation analysis to establish the stimulated model of phase-change memory array,and verifies the feasibility of the pre-read and write scheme.Through the analysis,it is concluded that,compared with the conventional erase and write operation,the pre-read and write operation of the phase-change memory array can effectively reduce the power consumption of the entire phase-change memory array in the erase and write process,and reduce the overall erase and write times of the memory array.Under this scenario,the lifetime of phase change memory array will increase.