Research And Design Of A 32K RRAM Memory Circuit

Compared with Flash memory,RRAM as a new type of non-volatile memory has the characteristics of fast running speed,high durability,low operating voltage and easy integration which is believed to replace Flash as the next generation of mainstream memory in the future.In addition,compared with the MOS type memory devices using popular technology,RRAM is supposed to be more "strong" under irradiation.Also,SOI technology which is adopted in the design can make the system more robust.Therefore,based on the design goal of anti-irradiation,this article will use the SOI technology to develop a storage system that meets the characteristics of RRAM devices and works under specific indicators.Memristor device is the core memory device of RRAM,the goal of this thesis is to develop a circuit system for a 32K RRAM device technology.The special characters of the device are analyzed,the matched circuits are developed which focus on read-write access circuits.The main work of this paper includes the following points:Firstly,the structure and the electrical character of memristor device are analyzed,and the RRAM cell is built up,which provides the foundation of whole design.Secondly,the read and write access operation are determined according to the analysis.Then a read access circuit is designed,in which a fast sensitive amplifier with high speed is designed to match the variation of the devices characters.This type of sensitive amplifier effectively realizes the correct and fast identification of bit line signals.After that a rapid distinguish method is applied in the design of the write access circuit which simplifies the read steps in write verification process and effectively improve the writing speed.Finally,the addressing circuits and control circuits are also built up with read-write circuit as the core.Then the RRAM system design is completed and the final layout is drawn.After completing the research and development of a 32K RRAM system circuit,the timing design and functional simulation of the whole system are completed.Through simulation results,it is important to determine whether the RRAM system circuit designed in this paper can work normally and ensure the realization of the overall circuit read-write function.The anti-irradiation ability of resistive devices and RRAM cells is also tested,and the tape-out results show that the RRAM cells circuits are nearly not affected by the irradiation.The last is the RRAM chip test verification.The test results show that the system works stable with correct read and write function.