The Research On The Impacting Factors Of Operating Voltage Of Resistive Memory Cells And Design Of Read And Write Circuits

With the improvement of living standards,people demand for consumer demand such as mobile digital products is increasing,especially small and large capacity to become the pursuit of the goal,which led directly to the storage density increase.However,the traditional flash storage capacity of unit area is about to reach the limit,therefore,the new non-volatile memory technology research is increasing.Because of its advantages of high integration density,simple structure,good anti-fatigue characteristics,long data time,low power consumption,compatibility with CMOS technology,etc.,RRAM is considered as a favorable competitor of the next generation non-volatile memory.However,before the variable-resistance memory is being commercialized,there are still some problems unresolved,such as electroforming voltage is too high,erase time instability.How to improve its electrical characteristics and stability become an urgent problem to be solved.The main work of this paper is to test the Au/TiO₂/Au RRAM device to find out the influence factors of the operating voltage.Finally,establish a read and write circuit to avoid the interference which above-mentioned factors on the use of variable-resistance memory caused.In this paper,firstly we optimize the rectangular pulse test method,and the FPGA is used to test the resistance memory cell to improve the test efficiency.Secondly,the influence of different film thickness and different temperature on the operating voltage was studied in the analysis of the test results.It was found that the difference of the film thickness mainly affected the operating voltage,and the temperature mainly affected the operating voltage.Finally,based on the above rules,establishing a read and write circuit which avoided the adverse effects of resistive random access memory cells caused by different temperature and film thickness.The circuit was simulated and verified by building a resistive memory cell using the way to build discrete devices.