Realization And Research Of1.57GHz CMOS Low Noise Amplifier

According to the requirement of people’s life and live, the application of wireless communication is increasingly broad. The direction of it is higher frequency and wider band. With achievement and success of much mature CMOS processing technology under deep submicron level, and the RFIC needs of low cost, low power dissipation and high integration, the RF CMOS IC has drawn much attention. The RF Front End is very important in the design of RF receiver, because its topology has great affection of the receiver. As a typical part of the RF Front End, the performance of Low Noise Amplifier (LNA) plays an important role of the receiver.The LNA is the first part of the receiver, which must have a low noise figure (NF) and a big gain to amplify the weak signal come from the antenna.Being aware of the difference between the RFIC and the common analog CMOS IC, the thesis about the high frequency and noise characteristic of MOSFET, the RF performance of resistance; capacity and inductance have been studied.After that the detail indexes of the LNA are explained, and all kinds topology of the LNA are described about their advantages and disadvantages, the common source and the common gate Cascode topology is our choice.At last, according to the requirement of the GPS receiver system RF-frond end, the Low Noise Amplifier(LNA) with TSMC0.18um RF CMOS process is fulfilled,which is a single end,and design steps has been given too. Simulation results of out circuit show that the noise figure NF<0.77dB, gain>14.4dB, the input and output impedance matching S11&S22<-12dB, the1dB compress point at-6dBm.