.0.18 Um Cmos Technology Of Wireless Local Area Network (wlan) 5.2ghz Rf Front-end Low-noise Amplifier Design

In the recent ten years, the rapid development of network and wireless communication are accelerating the informationized progress of society. The new challenge that explosive development of information has brought forward for communication field makes people try to combine the advantages of network and wireless communication. That is to say, the exchange of information between terminals and local wired network is realized in wireless way. This has made the wireless local network (WLAN) technology develop quickly.The dramatic progress of CMOS process technology has gradually evidenced its applications in RF front-end circuits. CMOS process possesses the advantage of low cost and highly integration, In recent years, the rapid development of wireless radio systems leads to an increasing demand of low power, low lost, high performance, high integration. So, it is necesery and possible that we designed a low noise amplifier (LNA) for RF front-end receiver with CMOS process.First, to give some guidance to the circuit design, based on large amount of literature, a summary of the MOS noise research is introduced with analysis and careful choosing of existed literature. Second, we select a low noise amplifier using a gate inductor and a source degeneration inductor for input matching. This circuit make the performances meet the object of the the linearity and voltage gain, and get the lower noise figure. Third, Our circuit is simulated by the EDA tools-ADS, the layout is designed by the EDA tools-cadence. Last, the test result meet the objective.The task in this paper is to realize the low noise amplifier (LNA) for the radio frequency (RF) module of 5.2GHz WLAN system with CMOS technology.