Design Of RF Low Noise Amplifier Based On CMOS Technology

With the continuous development of science and technology, communication between people has been transformed into a limited wireless communication. RF is a high-frequency radio waves, which is widely used in wireless communications. The performance requirements of receivers are very stringent, because receive is a important part of the field of wireless communication. The low-noise amplifier, the first unit of the receiver circuit, is not only a very important element, but also determines the performance of many of the follow-up circuit which is good or bad.Through the analysis of the wireless communication system, using bipolar transistors and MOS transistors for low-noise amplifier design, by ADS2009 software. Compared with the circuit design by using the bipolar transistor, the design of low noise amplifier by using MOSFET has good stability, high gain, low noise figure and other characteristics.The circuit is designed by TSMC 0.18μm geometries, and the simulation results showed that: under the supply of 3V, the operating frequency of using the bipolar transistor is 1.575 GHz, bandwidth greater than 3GHz, the noise figure of 4.703 dB, gain 14.365dB; Under the supply of 1.8V, using MOS transistor circuit to design circuit diagram, has a good stability. Its operating frequency is 1.575 GHz, bandwidth is greater than 3GHz, gain is 30.158 dB, and noise figure is 1.572 dB. Use Cadence software to draw layout. By contrast obtain the optimal design: using MOSFET design the low-noise amplifier, and the indicators complete better, with high gain and low noise figure.