Design Of CMOS PA Based On RF SOC In The Internet Of Things

With the development of the modern digital mobile communication technology, it’s becoming more and more popular to use it in our society and gradually becoming the important method of the social development.The primary function of RF power amplifier is to amplify the RF signal with high efficiency. It is widely used in diversified radio transmitters. The essential of amplifying signal is to transform DC power into high frequency power. The power amplifier (PA) is one of the systems which have the strongest non-linearity in communication system. The non-linearity will lead to expand the spectrum into adjacent channels and deteriorates the ratio of bit error. Using some linear technology can effective improve the linearity of the power amplifier. At the same time, CMOS technology is the mainstream process of the IC manufacturing process. In order to realize the monolithic integrated CMOS process of power amplifier will reduce the cost which will lay the foundation of the digital baseband unit and RF unit system in the future.This dissertation introduces the design of a2.4GHz CMOS power amplifier based on a0.18um CMOS technology. The result of pre-simulation、post-simulation and layout will be shown in this paper. The design will be implemented in two-stage circuit. A self-bias circuit will be added in the gate which optimizes the linearity range of the output power. Besides that, the dissertation proposes a fresh adaptive matching which will be used in the output stage of the PA, dynamically adjusting the matching performance of the output stage. The simulation result meets the design requirements and will be used in the CC2510...