Research Of Modeling Techniques For Deep-Submicron MOSFETs

The great demand of wireless communication to integrated circuit(IC) promotes the fast development of the semiconductor industry. More and more attention is paid to research of MOSFET with the development of CMOS and constant improvement of the MOS device cut-off frequency. Semiconductor device modelling is a key connection between circuit design and manufacturing technology. And with the device size becoming smaller, integrated scale becoming bigger, the integrated circuit process becoming more complicated, and the request to the precision of the model become higher. Accurate device model has become an essential problem to circuit designers.This paper studies the main work about deep-submicron MOS device modeling technology. The first chapter introduces the basic knowledge of MOSFET, including the development history, the structure and working principle. The second chapter introduces the relevant knowledge about MOSFET model, including the demand, kinds, history and research process. What's more, some traditional MOSFET models, such as Shockley model, are studied. Conclusion can be drawn that MOSFET models need to improve. The third chapter introduces the MESFET nonlinear model and DC data from a0.25μm MOSFET is used to be compared with the simulation result. The result shows that the6MESFET nonlinear models fit well with the measurement data of MOSFET. The forth chapter first studies the defects and problems of MOSFET models mentioned above, and then a improved new MOSFET model is proposed. The simulation is made to improve that this new MOSFET model fit well with the measurement data. The fifth chapter introduces current development of MOSFET RF modeling. Some methods of MOSFET RF modeling are proposed in some papers. These models and papers are studied.