Study On Physical Modeling And Parameter Extraction Of Deep Submicron MOSFET

In the major technology industries based on the semiconductor device industry,such as mobile phones,notebook computers,and the IoTs,the speed of R&D and market launch of chips is crucial for being able to stand out in the fierce industry competition.In face of the physical effects of shrinking device sizes and rising chip integration densities,the semiconductor manufacturing industry needs efficient and accurate device models.The integrated circuit design of chip is based on the performance characterization modeling of semiconductor device.Compared with the traditional way of making chip prototypes,it is more efficient and economical to build device simulation models through TCAD.It has become an urgent task for major chip companies to establish a fast and accurate device simulation model.Based on the deep submicron devices,the physical modeling of silicon-based MOSFETs,surface potential compact model and equivalent circuit model's parameter extraction are researched.The main contents include: 1)the basic equation of MOSFET physical model,the carrier recombination model and mobility model are studied;2)the 3D physical modeling process of 90 nm MOSFET is proposed and its DC characteristics and small signal S parameters of the physical model is simulated and analyzed;The effects of gate length,gate oxide thickness,gate polysilicon doping concentration and electrode spacing on the device characteristics are analyzed;3)analyze the DC parameter extraction process of HiSIM2 model and use an improved combined algorithm scheme to extract the DC parameters of MOSFETs.The approach is validated by the good fitting of DC characteristic curves;4)Using the parameter extraction formula of the MOSFET small-signal equivalent circuit,the parameters of the 90 nm MOSFET physical models with different electrode spacing are extracted.The influence of gate-source and gate-drain spacing on the intrinsic parameters is analyzed.