| The top issue of this thesis is the modeling and simulations of IC devices inVLSI-CAD. The characteristic length of MOSFET is scaling into the area of deepsubmicron and nanometer limited by the physics of semiconductor's device because of therapidly developments of VLSI technology, density and performance. Therefore, it is veryimportant in theoretically and practically that studies for new structure, modeling andsimulations in deep submicron and nanometer MOSFET. The studies are two aspects in simply: one is the scaling of MOSFET and another istheir modeling and simulation. 3D circuit structure is one of the development ways in VLSIstructural technology, so a lot of works should be done in its structure, modeling andsimulation. When the device's length is comparative to the carrier's characteristic length,the carrier transport models are achieving Boltzmann Transport Equation (BTE) andquantum transport equation (QTE). We aim to the new structural device, the modeling, thesimulation and the compute technology. The principle topics addressed in this report are ①an investigation of appropriatephysics and structures in device scaling, ② an implementation of appropriate modelingand methodology in deep-submicron/nanometer MOSFET, especially the numericalcomputation method for BTE and QTE, ③ exploration of essential physics of carriertransport and design optimization in nanoscale MOSFET. Computational microelectronics includes the device simulation, electron simulationand statistical simulation for million partial differential equation and nano-scaling physicsin VLSI. It can provide the physical foundation for new devices, new processes and designoptimization. It deals with physics and numerical analysis in combination ofmicroelectronics and computational mathematics. We started at the scaling and the physical limits in VLSI MOSFET. The structures, themodeling, the simulation and structural effects have been studied. Vertical silicon onisolation MOSFET (V-SOI), a new VLSI device's structure, had been produced from thesilicon on isolation, vertical and groove-gate structures. The simulations were done by useof an industrial 2D semiconductor simulator-- pisces-Ⅱ. Based on the V-SOI MOSFET we studied the modeling and simulations indrift-diffusion, BTE and QTE respectively. The applicable analytical solution and IIInumerical solutions had been made. BTE is the combinations of Newton mechanics of classical particles and scatteringquantum mechanism. This paper has studied respectively an analytic solution based onphysical reductions and a direct numerical solution based on computational mathematics ofBTE. The former produces a practical simulator of BSIM3, the simulator is a modifiedCMOSIS. The latter sets up a V-SOI MOSFET model by Finite Element Analysis,calculations and curves have been drawn with matlab. The influence of quantum effect for device property emerges in Deepdeep-submicron/nanometer. QTE is Schr?dinger–Poisson of the multiparticle interactionsystem with more complex and more computation. A QTE in atom is offered withnon-equilibrium Green's function (NEGF) formalism to simulating the V-SOI MOSFET.The simulator is the NanoMOS of PURDUE based on NEGF devoted to nanoscaleMOSFET. The basic physics of carrier transport in deep-submicron/nanometer device have beenstudied on BTE and QTE. The design and optimization on limits of the device scaling areimplemented followed by the International Technology Roadmap (ITRS) specifications forthe year 2014 transistor generation. The transport property of microstructure semiconductors on quantum mechanics is theone of most important research subjects of modern physics of semiconductor andmicroelectronics. This paper discusses some transports which arise from upper simulations.The special transport phenomenon represent new quantum transport mechanism, it is worthfor make further research. I...
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