Study On The Small Signal And Noise Modeling Of Deep Submicron MOS Field Effect Transistor

With the integrated circuit integration becoming more complexity, more small, so more and more engineers depend on computer aided software to complete the circuit design. However, the accuracy of embedded device model directly determines whether the simulation circuit can accurately reflect the characteristics of the real circuit.This thesis is aimed on the deep submicron MOSFET’s model. Firstly, the technical background, the research status, and the development process of semiconductor and integrated circuit were reviewed. Then the development trend of the future and the MOSFET model establishment method were briefly summarized.The main research work of this thesis includes:1) The open and short circuit method was used to remove parasitic parameters of test structure; then the small signal equivalent circuit model of MOSFET was established, and the parasitic parameters of the inside small signal equivalent circuit model and the intrinsic parameter extraction were obtained in frequency range 0 to 40 GHz; 2) The results of simulation and the range of application were analyzed; 3) In addition, the quasi static effects of small signal equivalent circuit model was considered, and the results of simulation was analyzed also; 4) The noise model that contains POSPIESZALSIK temperature model and PUCEL noise model on the basis of small signal model was established, then the method of how extract integrated model of noise parameters was proposed; 5) The noise parameters and the simulation results of the comprehensive noise model were analyzed finally.