Research On Hot-carrier Effects For Deep-submicron LDD MOSFET

With the rapid development of VLSI manufacturing technology to deep-submicron, the hot-carrier effects led to the reliability problems of MOSFET circuit system. The LDD MOSFET device studied in this article, intensifying the reliability and suppressing hot-carrier effects effectively, is an ideal structure for deep-submicron device.A compact model of deep sub-micron LDD MOSFET based on typical short channel MOSFET device model is built in this paper. By the mechanisms of hot-carrier injection and production, the hot-carrier effect under different biases is analyzed and a gate current model based on lucky-electron model is exported. Further more, the mechanism of substrate current is analyzed and a LDD MOSFET device substrate current model is built. The substrate current in LDD MOSFET still demonstrates a unique characteristic different from the conventional MOSFET, particularly in a very short gate length device. And it is very sensitive to the hot-carrier degradation, a novel substrate current model is proposed for deep-submicron LDD MOSFET with an emphasis on the description of the important characteristics parameter l which takes into account the effects of channel length and bias.The LDD MOSFET device is analyzed and the effect of hot-carrier produced by LDD MOSFET device processing parameters is studied.A physical explanation of the hot-carrier degradation caused by the LDD MOSFET device is made, and a research on the CHC and DAHC stress is did. Finally, a hot-carrier research on the extension of the LDD MOSFET structure (DDD MOSFET, MLDD MOSFET, ITLDD MOSFET, PLDD MOSFET, BLDD MOSFET) and some further research on the reliability of the device with different structures are studied.