Soi-based High-pressure Switch Ic Design

SOI (Silicon on Insulator) technology is very promising silicon technology, called silicon technology of the 21th Century. It has many advantages,such as excellent devices isolation, reducing parasitic effects, high speed, resistance to radiation, high integrated density. High voltage SOI SPIC (Smart Power IC) has become a new field of power integrated circuit. SOI high voltage switch integrated circuit is researched in this paper. This is a project of defensive science laboratory. Based on the SOI material characteristic, A design method that how to integrate high voltage power device with digital analog mixed circuit for high voltage switches IC on the SOI material is researched in this paper. At the same time, we researched the process for this circuit,which can provide a good technology platform for the mixed circuit. The design of the high voltage LDMOS power switches circuit with the D/A driver on the SOI material has been completed. By taking advantage of convenience of D/A transform, it was realized that a 300V LDMOS power switch circuit with digital control by digital circuit and high voltage circuit design method. This integrated circuit control the frequency and pulse width of the high voltage IC output signal conveniently by adjusting the input date of IC digital input port. The realization of the high voltage power integrate circuit offers not only a fast and convenient design method for SOI high voltage power switch circuit, but also a valid experiment for system power integrate circuit. It confirms the possibility of system power integrate circuit in the theory and engineering. This IC has some practicality too.