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Research Of High Voltage Integrated Circuit Based On High Voltage MOS Power Device

Posted on:2009-03-12Degree:MasterType:Thesis
Country:ChinaCandidate:B ZhangFull Text:PDF
GTID:2178360245468636Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
The emerging of power integrated circuit (PIC) is important to increase the system's reliability and reduce its cost, weight and volume. It enables the design and production of even more miniaturized and smart systems for different applications in the field of automotive, industrial and telecommunication. In this paper, a Pulse Width Modulator Amplifier has been designed successfully. It is a typical PIC, which can be used to control micro midi DC motor. In this system, control circuit, drive circuit and high voltage H bridge are contained.In the research of the high voltage device, using Double RESURF and field-plate technology, an LDMOS device for high/low voltage IC's was proposed. The breakdown voltage can mount to 700V. Effects of device parameters on the breakdown voltage and on-resistance were analyzed by using 2D devices simulator MEDICI. Hence, the requirements of high voltage and low on-resistance was achieved.In the design of the circuit, author discussed the design of each sub-circuit. It was simulated by the CAD tools of Cadence. The simulation result showed that the circuit design can satisfy the target.Based on the standard Pwell CMOS technology, after referenced the epidemical BCD technology in the world and considered the specialty of the circuit, the circuit's high and low voltage compatible technology was designed. Author designed the circuit's layout based on the technology.
Keywords/Search Tags:High voltage integrated circuit, BCD technology, LDMOS, MEDICI, Control circuit
PDF Full Text Request
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