Characteristics Research On High Voltage Soi Lateral Power Device And Circuit For Line Scan Driver

SOI(Silicon on Insulator) high voltage integrated circuits are widely used in automotive electronics, medical electronics, household appliances, industrial control, aerospace and lighting applications owing to its advantages such as good isolation, high speed, high level of integration, low power dissipation, latch-up immunity and anti-radiation. Now, SOI technology has become one of the mainstream technologys of advanced silicon integration technology. As one of the applications of the SOI integration technology, the line scan driving IC is widely used in the plasma display. Plasma display is a new direct-view image display device, which has good display effect, long lifetime, high look-angle, high response speed, etc. As the wide application of the technology, driver chip development with independent intellectual property rights is of great significance. Line scan driving circuit based on SOI technology combines the advantages of SOI technology, which has advantages over the diring circuit based on bulk silicon. The design of the high-voltage SOI device and its corresponding circuit is very important.In this paper, the breakdown mechanism of the high-voltage SOI devices is researched and the breakdown model is astablished. high-voltage SOI devices and circuit for line scan driving is designed and studied based on thick layer SOI, such as the high-voltage SOI PLDMOS(P-channel Lateral Double-diffused MOSFET), SOI NLDMOS(N-channel Lateral Double-diffused MOSFET), frequency divider, input choose circuit, shifting register, level shift circuit and other related circuits. The SOI material of 11-μm-thick silicon layer and 1-μm-thick burided oxide is used. The NLDMOS and PLDMOS are designed based on device simulation tools and its integration process is developed for the need of driving circuit application. What’s more, each module of the line scan driver circuit is designed to achieve SOI-based Plasma Display Panel(PDP) line scan driving IC.The main contents and innovations are as follows:1. The breakdown model of high-voltage SOI device is astablished, high-voltage SOI NLDMOS and PLDMOS are designed, and the corresponding integration technology is developed. The electric field and potential distribution can be got from the breakdown model. Also, the RESURF criterion can be obtained. Based on the11-μm-thick silicon layer and 1-μm-thick burided oxide, thin-gate-oxide SOI NLDMOS and thick-gate-oxide SOI PLDMOS for high-voltage line scan driving IC are designed. The influences of device parameters, such as field plates and doping concentration of drift, on the off- and on-state characteristics of the device are investigated. Meanwhile, this paper develops the corresponding SOI high-voltage integration technology which is capatible with traditional CMOS technology. Experiment results show that the breakdown voltage of SOI NLDMOS and SOI PLDMOS are 210 V and-240 V, respectively, which satisifies the requirement of the PDP scan driving IC.2. A novel SOI PLDMOS with partial high K dielectric buried layer is proposed. The high k Dielectric buried layer is used to replace the partial buried oxide layer of conventional PLDMOS structure, which reduces the accumulation layer’s resistance of drift region, The device thus have a lower specific on-resistance while reducing the self-heating effect simultaneously. Compared with conventional SOI PLDMOS, the proposed structure device sustain a similar high breakdown voltage, but the specific on-resistance reduces by 24% in comparison with that of conventional structure. The maximum temperature of the device is lowered by 59%3. The high-voltage line scan scan driving circuit is designed. The circuits includes f/6 frequency device module、input choose circuit module、6 bit switch register module、16 bit switch register module、output circuit module、level shift module. For each module, the function and theory are analyzied. In the end, the PDP scan driving circuit with application voltage of 150 V and driving current range from-500 m A to 350 m A are realized. Besides, it has good anti-radiation property.Besides, a novel vertical CRD(Current Regulator Diodes) is studied. The vertical CRD with breakdown voltage of 250 V, current of 1.5×10-5 A/μm, pinch off voltage less than 5 V and good constant-current characteristic is realized.