Circuit Design For Switch Power Supply And Its High-Voltage Power Devices Development

The switch power supply as the source of electronic equipments, toward the trend of high efficiency, high power factor and low cost. The high voltage switching devices are very critical and thus become the priorities of today’s research.Firstly, a novel PSpice model of drive IC and transformer is set up on the analysis of the LED. The primary side control is used to realize a flyback LED circuit. Secondly, using the RESURF technology in the simulation and optimization of a LDMOS with more than600V breakdown voltage is designed and applied to the high and low voltage IC of the.driving chip. In order to raise the working frequency and the efficiency, a fast switching VDMOS is designed. Improvement is made to the traditional Trench-NPT-IGBT, obtain a IGBT with a breakdown voltage of1200V.The innovativeness of the thesis is as follows:(1) In the design of the LDMOS, the p-top layer, P buried layer and N-buffer layer are added to increase the doping concentration of drift region and reduce the specific on-resistance. Meanwhile, the optimization of Ld, Lf, Lp, LBPL is made and a LDMOS process program is proposed in combination of the BCD technology.(2) In the VDMOS design, the high energy ion implantation is used to reduce the lateral degree of diffusion, the effective length of the gate and the reverse transfer capacitance and to raise switching speed; JFET junction is used to solve the conflict caused by the increment of the turn-on resistance and optimize the XjP, DCS,Lw, LP.(3) A side-poly is introduced to form a reversal field and to solve the shortcomings of the gathered electric fields in the bottom of the trench gate; software is used to optimize the Dsp, Wsp, Vsp, and the results have shown a improved breakdown voltage strength and threshold voltage compared with the traditional.Besides, a distributed LED intelligent lighting system is designd and the hardware design of the terminal nodes and coordinators is implemented.