Structure Design And Characteristics Analysis Of Novel ESD Protection Device And Circuit

With the development of semiconductor manufacturing process, device feature size is scaled down constantly. ESD (Electro-static Discharge) has become one of the most important reliability problems in IC (Integrated Circuit). Many ESD protection devices and circuits are no longer widely used in nanometer-scale ESD protection application. Therefore, in order to improve the ESD protection ability effectively, analysis and design of novel structure of ESD protection device and circuit become more important.Based on the current study of ESD protection, an in-depth research about the novel structure of ESD protection device and circuit is proposed in this paper. Firstly, a detailed theoretical model of latch-up effect is presented, which not only provides theoretical support for the latest system-level ESD protection and the unified theory of SCR device structure, but also acquires more comprehensive protective measures in case of latch-up. Secondly, the latest system-level ESD protection were analyzed, According to system-level ESD failure mechanism, a hardware and software co-design solution is proposed, which can effectively solve the system-level ESD failures due to latch-up effect. Finally, by analyzing the different system-level ESD immunity for clamp circuits, a new structure modified circuit is proposed to effectively improve the system-level ESD protection capability.For novel ESD protection device, this paper focuses on a variety of SCR devices, through theoretical analysis of the basic structure of the SCR device, a basic SCR device theory model is presented, which guides the research of SCR device characteristics. By comparing with many types of SCR devices structure, this paper obtains a unified SCR devices module and has put forward an innovative standard modular design engineering theory of SCR type devices. By analyzing the T and M module's features, this theory guides the ESD protection device design engineer how to design the new SCR devices according to the different needs. Finally an innovative design and analysis of a novel SCR device-DBTSCR is presented, which not only has the common advantages of SCR device, but also has excellent characteristics, such as dynamic adjustable trigger voltage, smaller parasitic capacitance, fast reaction speed, and excellent immunity of latch-up. This device has a wide range of application prospect in high-speed and RF integrated circuits for ESD protection.For novel ESD protection circuit, this paper focused on studying ESD clamp circuit. First of all, a detailed design guideline of clamp circuit is given. Then, by analyzing the whole structure, a novel innovative ESD protection clamp circuit is proposed, which adopts rising-edge triggering TSPCL D flip-flop to turn on and time delay. The novel structure prevents false triggering even if it is applied in the faster power events. It also has excellent immunity to power noise. The novel circuit not only has the advantages of low power and low cost. But also can be applied in different process conditions (including nanometer) of integrated circuit. Research and verification results show that the circuit is particularly suitable for the ESD protection in high-speed integrated circuits.