Program, erase, and read transient models for a flash EEPROM

In electronic devices on the market today there is an increasing requirement for denser memory that requires less power and provides faster access times. An important requirement in the development of future flash memory is accurate modeling prior to the fabrication process. This thesis presents the simulations that can accurately model the transient response of flash memory during programming, erasing and reading. Three approaches will be presented to simulate the programming transients that span from a low resolution model which uses many assumptions to a high resolution model that was based upon a nonquasi-static MOSFET model. Three models are also presented that simulate the transient erase process. These models consist of the substrate, drain, and source erase where special emphasis has been placed on the substrate erase model because it is the current industry standard. The final model presented in this thesis is a nonquasi-static read model.