Research On Self-heating Effect Of GAAFET

With the rapid development of the integrated circuit industry,the advanced process node of semiconductor devices has reached 5nm.In order to suppress the short-channel effect caused by the shrinking of the size of semiconductor devices,the device structure has changed from traditional planar design to three-dimensional Fin FET devices and GAAFET.Device and other structural development.In addition,silicon-on-insulator structure devices and new materials(such as Si Ge with low thermal conductivity,etc.)have also been introduced into traditional silicon-based MOS devices.However,while device performance is improved,more reliability challenges arise due to issues such as intensive heat generation and inefficient thermal diffusion.The study of self-heating effect is of key significance for device reliability evaluation and service life prediction.This paper focuses on the device preparation,characteristic testing and thermal model simulation of 0.5?m MOSFET device.The main content and research results of this paper are as follows:1.Prepare 0.5?m MOSFET devices by CMOS process,prepare devices with different gate lengths,and test their transfer characteristics Id-Vg,capacitor voltage characteristics Cg-Vg,leakage current Ig-Vg and other characteristics.2.Use the simulation tool Sentaurus TCAD to build a 0.5?m MOSFET device structure model,simulate its electrical and thermal characteristics,compare and demonstrate with the experimental data,and explore the influence of different heat conduction models.At the same time,the influence of the simulation parameters on the thermal effect is studied.3.Build a nanoscale GAAFET structure model with the same gate and long gate width,and theoretically simulate the electrical and thermal properties.Change the simulation parameters to study the effect of different materials of the source-drain gate structure on the self-heating effect;the effect of different stacking schemes on the selfheating effect of the GAAFET is studied.4.Through theoretical derivation,focusing on the self-heating effect of the device at the nano-nanosecond scale,the electrical characteristics,thermal conduction mechanism and thermal conduction model are studied,and the similarities and differences between the models and the scope of application are compared and discussed.