Self-heating Effect And Hot-carrier Effect Of Strained-Si CMOS

As the development of the ICs, geometric scaling down has not been fit for the Moore'Law, so the strained-silicon has become the hotspot of the post-Si age. The strained-Si technology can improve the capability of the device by creating a tensile or a compression to the crystal lattice. At the same time, the process of strained-Si and the bulk-Si are compatible. It reduces the investment for improving the process establishment and the cost. As a result, it is significant to research the capability and the reliability of the strained-Si CMOS device.This paper introduces how to produce uniaxial strain and biaxial strain, the capability of the materials and the process. We analyze the ingredients, thickness and growth process of the relaxed SiGe buffer.The main contents of the paper are self-heating effect and hot-carrier effect of the biaxial strained-Si CMOS device. Because of the poor thermal conductivity of the SiGe, the heat of the working device is blocked, so the self-heating effect is much worse in the biaxial strained-Si than the bulk-Si. The paper explains how the self-heating working and introduces the means of the measurement and restraint by analyzing the materials and structure of the strained-Si device. The transfer capabilities of the bulk-Si and the biaxial strained-Si are compared by ISE-TCAD. And the output capabilities, which proved the self-heating effect of the biaxial strained-Si with the self-heating or not are compared, too.Hot-carrier effect is one of the important reliability problems on strained-Si device, because the outstanding capability of the strained-Si is due to the improved carrier mobility. The paper analyzes how the hot-carrier effect to be induced, the measurement methods and the impacts and the means of restraint on the design and process. Particularly, we simulate the hot-carrier effects of the strained-Si nMOS and bulk-Si by ISE-TCAD.