Simulation Analysis Of Radiation Characteristic Of CMOS Image Sensor Pixel

In recent years, with the rapid development of semiconductor industry , the process technology has been improved significantly. Meanwhile, the performance of CMOS image sensor has been highly increased. Currently, CMOS image sensors have been widely used in many fields, such as electronic products, security applications, medical, 3D imaging,automotive, etc. In addition to used in civilian products, CMOS image sensors in space exploration and military fields have also been widely used. When the CMOS image sensor used in the space environment, space radiation would have a serious impact on CMOS image sensor, and there will be a serious decline in the performance of CMOS image sensor.Therefore, the study of radiation-harden method on CMOS image sensor is very important.In this paper,the working principle of CMOS image sensor and SOI MOSFET are introduced firstly, and the specification of CMOS image sensor has been presented. The generation mechanism and the composition of noise have also been presented. The 2D process simulation of CMOS image sensor 4T pixel and the 3D simulation of hybrid SOI CMOS 4T pixel have been done to study the radiation impact on pixel in Sentaurus TCAD.The structure of buried-channel SOI NMOS source-follower has been improved based on the simulation and analysis of buried-channel SOI NMOS, which has been successfully used in hybrid SOI CMOS 4T pixel. In addiation, the radiation-harden method for the light-sensing area has been utilized. In Sentaurus TCAD simulation environment, the 3D structure of radiation-harden hybrid SOI CMOS 4T pixel has been established. The pixel size is 2.9?m×2.9?m?The output range of hybrid SOI CMOS 4T pixel has been expanded from 2.7V to 3.2V though the verification of radiation-harden hybrid SOI CMOS 4T pixel characteristic.The anti-radiation dose of hybrid SOI CMOS 4T pixel.has been improved from 1Mrads to 2Mrads by using buried-channel SOI NMOS source-follower.