Font Size: a A A

Radiation-hardened analog circuits in partially-depleted SOI CMOS

Posted on:2006-11-12Degree:M.SType:Thesis
University:The University of Texas at El PasoCandidate:Perez, AlfredoFull Text:PDF
GTID:2458390008973456Subject:Engineering
Abstract/Summary:
The traditional use of SOI CMOS has been in the development of radiation-hardened integrated circuits for the military and aerospace. In this thesis, the possibility of implementing SOI analog circuits where body ties are used selectively to reduce a circuit's total area is studied. Based on a 0.18um adaptation of the PD BSIMSOI2.0 transistor model, a simple two-stage op amp was simulated in SPICE3f5 to analyze the effects on performance (e.g. gain, 3db and unity-gain frequencies, phase margin) of having specific blocks in the architecture operating with floating bodies. From simulation results, optimal op amp performance was only obtained when all transistors included a body tie---NFETs to VSS, PFETs to VDD---; however, minimal performance degradation occurs in the case when only the biasing network in the circuit is untied. Simulation of radiation-effects on SOI op amp performance is also addressed in this investigation. This research is preliminary to the pursuit of radiation-hardened, reconfigurable analog SOI hardware development by our group in the near future. (Abstract shortened by UMI.)...
Keywords/Search Tags:SOI, Radiation-hardened, Analog, Circuits
Related items