Study On Design Of Radiation Hardened Shift Register Based On DICE Structural

With the rapid development and progress in space science and microelectronics technology, Complementary Metal Oxide Semiconductor(CMOS) Integrated Circuit(IC) has been widely used in astronautics fields, including satellite, aircraft, space station and so on. Both control equipment and data storage cell largely depend on the integrated circuit, and these devices are running the space environment which is full of all kinds of ion and ray radiation. The devices of spacecrafts operating in such radiation environment are easily affected by radiation of various high-energy ions which causes the information processing system dysfunction and even damage to the electronic device. It will greatly reduce the operation reliability of space vehicle. It has been a popular research topic to improve the reliability of the integrated circuit working in the radiation environment.Register playing the role of storage information in integrated circuit is particularly sensitive to radiation effects. The radiation hardened on the register storage cell restricts the reliability of digital integrated circuit and logic circuit. With the continuous development of the aerospace industry, there is an ever-increasing demand for anti-radiation performance of integrated circuits. Dual interlocked storage cell(DICE) has been widely studied and applied currently as a popular radiation hardened design method. So the design of shift register based on the DICE structure and verification performance of its radiation hardend play a very important effect.Based on the background mentioned above, in order to verify the effectiveness of the DICE structural in terms of single event radiation hardened, the 1024 bits shift redister based on DICE structure was designed in a commercial 0.18 μm process line. And a single event radiation experiments system also was built. The specific research contents are as follows:Space radiation environment, a variety of radiation effects and damage mechanism were analyzed and researched in the theoretical; The single event effects(SEEs) of the memory cells were analyzed as a focus, and it was analyzed and explained on combining with the PN junction and specific impact on the latch unit; the radiation hardening performance of the latch based on DICE structure was simulated and studied.Two kinds of 1024 bits shift registers were designed, one was based on DICE structural and another was based on traditional 6 transistors structural. Firstly, simulated the SEEs of the different structural latchs in software, and comparatively studied the radiation hardening performance of traditional structure of D flip-flop with DICE structure of D flip-flop, and analyzed the global circuit radiation hardening performance of the entire circuit contribution. Secondly, the 1024 bits shift register was designed on the basis of the D flip-flop, and schematic design, layout design and simulations for some important modules were completed. Test work was carried out after successfully taped out, and the results show that the design effct is achieved. Finally, A single event radiation experiments testing system was set up for the radiation experiment. This paper provides a certain reference for the design of radiation hardening memory cell.