Flash Charge Pump High Pressure Failure Analysis And Improvement

From the 1960 s began to semiconductors memory, whether in structure, performance, or in the storage density, every year is made by leaps and bounds development. In 1980 s, Flash memory is gradually developed a kind of new type semiconductor non-volatile memory, it is simple in structure, high density, low cost, high reliability and the electricity erasable in the system and other advantages, It become a kind of most rapid development memory in semiconductor’s market today.Flash memory was considered as the representor of non-volatile memory, with the development of integrated circuit technology, Flash products become to mature, market competition is more intense, the Flash memory design more and more toward the high performance, high density, large capacity, low power consumption, low cost and other development direction. Different structure, different technology flash to emerge in endlessly.Super Flash by its unique Split-Gate technology, better reliability than other the Flash, simple interface circuit, may be with the logic of the perfect process compatible, took a place in the fierce competition of the Flash memory area.This paper first introduces the traditional Flash memory of the basic operation, technology classification, development trend, and then introduced the structure characteristics of Super Flash, and working mode, especially programming and erase the operation, working principle. Since then to actual production process in charge pump high-pressure system failure problems, through the design of the product to circuit analysis, combined with the technology process and grain round to test charge pump high-pressure system failure problem discussed. Finally, design process experiment, through the change process and in the end the charge pump high-pressure system to solve failure problem.