Design Of 16-18GHz SiGe BiCMOS Low-noise Amplifier

With the development of modern phased array radar and wireless applications,Ku band application scenarios become more important.The traditional radar transceiver?T/R?modules are constructed with discrete components.Its disadvantage is large size,high power consumption and high cost.On the contrary,integrated single-chip radar T/R module can not only support the required functions in a variety of commercial and military applications,but also cost less.As the first module in the receiver of T/R modules,the noise figure of the low-noise amplifier?LNA?largely determines the noise performance of the receiver.So it is the key point to design a low-noise amplifier with low noise figure in Ku band.Based on 0.13?m SiGe BiCMOS process,a 16-18GHz low-noise amplifier is designed in this thesis.The process provides a high-speed SiGe heterojunction bipolar transistor?HBT?,which has innate advantages in the design of low-noise amplifier.The low-noise amplifier is composed of input matching network,inductive emitter degeneration Cascode amplifier and output matching network.This thesis mainly focuses on the method of matching noise and input power in Ku band simultaneously.The input impedance and source impedance form conjugate matching while the noise figure?NF?reaches the minimum noise figure(NF_min).The on-chip spiral inductor with high quality factor is designed by electromagnetic simulation to further reduce the noise figure of LNA.Shunt inductive peaking technique is used to improve in-band gain flatness.The parasitic parameters are reduced by optimizing the layout of LNA.In this thesis,circuit design,pre-simulation,layout design and post-simulation with electromagnetic simulation are carried out.The EM simulation results show that,under 3.3V supply voltage and within 16-18GHz bandwidth,the noise figure is less than 2.1dB,in-band gain S₂₁ is 15.1-15.3dB,S₁₁ and S₂₂ both less than-10dB,and the output compression point of 1dB is above 0dBm.The Ku band low-noise amplifier designed in this thesis meets the design requirements.After verification by tapeout,this low-noise amplifier can be applied to phased array radar T/R module.