Ku Band Power Amplifier Based On SiGe Process

In recent years,with the rapid development of wireless communication technology,the requirements for wireless transceiver are getting higher and higher.Power amplifier is the most important circuit in RF front-end circuit and it is the most energy-consuming among all components in wireless communication systems.Driven by the demands of small size,lower power consumption and lower cost,the RF integrated circuit has become a research hotspot.PA's performances have a great effect on the transmitter.In the early years for RF PA design,the GaAs/InP ?-? semiconductor technology is completely dominant.However,these PAs are difficult to integrate with baseband circuits in a single chip.With the improvement of SiGe BiCMOS technology in the recent years,SiGe BiCMOS technology has significant improvement in device's performance such as cutoff frequency and power density.Therefore,PA design based on SiGe BiCMOS technology achieves more and more attention.Based on the above reason,a Ku band PA is researched and designed in this article based on IBM 0.13?m SiGe BiCMOS technology,which is applied to phased array radar.The PA is single-end structure and biases in class AB.The PA consists of two cascode structure and uses resistor in series with the base of the transistor to improve the stability.The resistance voltage divider bias circuit is adopted in the common base configuration and the linearization bias network is used for the common emitter configuration.Conjugate matching method is used for input matching and interstage matching,which consist of passive T-type network.The output matching uses loadpull matching and consists of passive L-type network.In addition,the temperature compensation circuit has been used to improve thermal stability of PA.The circuit design,layout design,bonding PCB design and joint simulation results of the 15?17 GHz PA are given in this paper.With a 3.3V supply voltage,the power amplifier achieves 22.45dBm output power at the 1 dB compression point and the maximum power added efficiency(PAE)is 24%.The gain flatness is less than or equal to ±0.3dB among the operating bandwidth,S11 and S22 are all less than-5.6dB.The chip area is 1560?m×970?m.