Based On Broadband Low Noise Amplifier In Sige Process Design And Implementation

SiGe process is widely used in mobile communication, satellite location and RFID markets because of its high performance and cost-performance ratio. It is easy for SiGe process to integrate RF, digital and analog circuits on a chip, resulting in SoC which has the entire function. More and more RFICs (Radio Frequency Integrated Circuit) are fabricated with SiGe process now.The frequency and bandwidth is increasingly higher and wider along with the widely use of wireless communications, so it is very important to research the wide-band and ultra wide-band circuits. This thesis exactly researched the keycomponent of wide-band wireless applications--wide-band low noise amplifier(LNA) based on advanced SiGe process. The aim of this thesis is to design and manufacture high performance wide-band LNA RFICs.Based on numerous references, this thesis researched various design methods of the wide-band LNA thoroughly, compared all kinds of traditional and novel circuit structures; and then designed two novel ultra wide-band LNAs which both obtained more than triple frequency bandwidth.Designed an 800M-2.4GHz wide-band LNA using the input band-pass filter matching structure. The LNA achieved 2.1dB～3dB noise figure (NF) and 17dB gain in the pass band with less than -10dB input and output match. The power dissipation of the LNA was merely 11mW. It was indicated that the measured results matched well with the simulated results through on chip test.First time realized a 3.1G-10.6GHz ultra wide-band (UWB) LNA with the current-reuse technology. It achieved minimal noise figure of 2.7dB and more than 18dB gain with only 10mW power and 0.2mm~2 chip size. This thesis conducted out the mathematic expression of the current-reuse LNA's input impedance which has significant guiding meaning.