Design Of Ka Band Silicon Based Millimeter-wave Power Amplifier

With the demarcation of the 5G millimeter wave band and the development of the phased array radar,the application of the Ka band is becoming more and more broad.Silicon based devices have the characteristics of low cost and easy to integrate,making it possible for the widely use of Ka broadband transceivers.The Ka band silicon based millimeter wave power amplifier is the key to the development of radio frequency SOC.The progress of device and technology is the driving force for the development of millimeter wave circuit to miniaturization,monolithic and low-cost.In recent years,with the development of integrated circuit technology,especially the silicon based RF technology,it is possible to replace the MMIC with RFIC technology.As the largest power consumption module in transceiver,the design of a broadband power amplifier that can achieve high output power in the whole frequency band is the key and difficult point in the design of Ka transceiver.The 26.5-40 GHz wideband Ka band power amplifier is based on 0.13 m SiGe BiCMOS process.The Ka wideband power amplifier designed in this thesis is composed of a broadband input matching network,a main amplifier circuit with interstage neutralization inductance and a load pull network.This thesis focuses on the realization of the broadband impedance matching,the bandwidth expansion technology of the power amplifier with interstage neutralization inductance,the power enhancement technology based on the stacked cascode structure and the optimization of the parasitic parameters of the power amplifier layout.It is designed to be able to achieve high output power in the whole Ka band.EM simulation results of PA show:when power amplifier in 6.6V supply voltage,the load is 50 Ohm,the range of voltage gain is 15.5-20.1dB,S11 is less than-10 dB in the band,the output 1dB compression point is larger than 19.1dBm in the whole Ka band,the maximum value of output 1dB compression point is 23.4dBm,saturated output power reached maximum value 25.8dBm,the maximum value of power added efficiency is 34%.The Ka broadband power amplifier designed in this thesis has normal function and large bandwidth,which meets the requirements of the target.With further optimization,this power amplifier can be applied to the phased array radar and the 5G high frequency communication equipment.