Design Of A 6-18GHz Low-noise Amplifier Based On SiGe BiCMOS Technology

Broadband wireless communication systems are widely used in satellite communications,in-vehicle communications,and other short-range communications because of their high-speed data transmission advantages.Advanced radar systems developed for emerging applications require RF transceivers capable of handling wideband signals.RF transceivers for radar systems are moving in the direction of monolithic integration.And research on integrating multiple functional circuits on a single chip has become a hot topic.The Low Noise Amplifier(LNA)is the first active module in an advanced radar system receiver link,and its performance has a critical impact on overall system performance.This topic is mainly to study the 6-18 GHz low noise amplifier used in phased array radar systems.This paper designs a 6-18 GHz low noise amplifier based on IBM 0.13?m SiGe BiCMOS process.The LNA used a two-stage amplification structure.In order to improve the reverse isolation of the amplifier and further increase the gain,each stage of the LNA used a Cascode architecture and parallel inductor peaking technique to extend bandwidth and improve linearity.In the input stage of the amplifier,the paralleled resistor negative feedback was adopted.The emitter inductance negative feedback was adopted to further improve the gain flatness and further expand the bandwidth.Genetic algorithm was adopted to perform input impedance matching and achieves good results.The circuit design,pre-simulation,layout design and EM simulation results of the ultra-wideband LNA are shown.The LNA works with 3.3V voltage supply.The EM simulation results show that the in-band gain range of the wideband low noise amplifier is 18.02-19.50 dB and the in-band ripple is less than 1.5dB in the frequency range of 6-18 GHz.The noise figure of the LNA is 3.54-4.33 dB.The S11 is less than-14.3dB,and the S22 is less than-20.3dB.The output 1dB compression point of the LNA is 14.15 dBm.The total current of the circuit is 21.4mA.The LNA designed in this paper meets the design specifications.It can be applied to phased array radar and 5G high frequency communication equipment through fabrication and verification.