Research On The GaN Internal Matching Power Amplifier Of S-band

With the continuous innovation of wireless communication technology,we put forward higher and higher requirements for the performance index of microwave power module in microwave communication system,especially in high power,wide band and high efficiency.With the appearance of GaN materials with excellent performance in forbidden band width and electron drift velocity and so on,this problem is solved.In addition,as communication systems tend to be integrated and miniaturized,we have very high demands on the external size of high-power solid-state power amplifier,and the internal matching power amplifier devices have obvious advantages in terms of volume and weight.Although the MMIC amplifier also has the characteristics of small size and light weight,the output power of a single MMIC device is not high.At the same time,it's very difficult to fabricate and the cost is very high.For example,in the application of super-large power phased array radar,the internal matching power amplifier module not only realizes large output power,but also meets the requirement of miniaturization,so that the system can obtain stronger remote operation ability.Therefore,the GaN internal matching power amplifier contributes to a hot research direction.The main work of this thesis is to study the GaN internal matching power amplifier of S-band The main research work is as follows:1.This thesis briefly introduces some basic knowledge of GaN power amplifier,such as main indexes,classification and their respective characteristics,as well as some key technologies suitable for internal matching.By consulting relevant literatures at home and abroad,a design idea suitable for this subject is sought,and these knowledge and technologies are applied to the design of GaN internal matching power amplifier in this subject;2.An S-band high output power amplifier is designed by combining the Wilkinson power distribution synthesis principle with impedance matching technique.In the working frequency range of 2.7?3.5GHz,with a period of lms and a duty cycle of 20%,the saturated output power is over 200W,the power additional efficiency is greater than 45%,the large signal power gain is greater than lOdB,and the gain flatness is less than±0.5dB;3.A broadband S-band power amplifier is designed by using the third-order low-Q LC low-pass matching network technology.In the working frequency range of 1.5?3.0GHz,with a period of lms and a duty cycle of 20%,the saturated output power is over 100W,the power additional efficiency is greater than 50%,the large signal power gain is greater than 12dB,and the gain flatness is less than ±0.5dB.