| With the emergence of third-generation semiconductor materials represented by GaN materials,GaN HEMT has been widely concerned because of its wide band gap,high thermal conductivity,high breakdown field strength and high peak electron drift velocity.Broadband power amplifiers based on GaN materials are widely used in wireless communication systems,wireless local area networks and electronic countermeasures,radar systems,etc.Now all kinds of application systems in the field of civil and military have higher and higher demand for performance of the microwave power amplifier modules,especially in the wide bandwidth,high efficiency,high linearity and so on.Therefore,the broadband power amplifier has become a hot research direction.The work of this paper is to study the broadband power amplifier which based on GaN materials,the research work mainly has the following points:1.This paper summarizs the basic theoretical knowledge of broadband power amplifiers and sorts out several kinds of commonly used broadband power amplifier topologys based on the research status of broadband power amplifier at home and abroad.The design ideas of this subject are obtained from the review of these documents.2.This paper designs a L-band wideband power amplifier,which adopts the multi-branch T type matching network.In the working band of 0.8 ~ 2GHz,the output power of the amplifier is more than 60 W,the power added efficiency is more than 45%,the large signal gain is greater than 8dB,and the gain flatness is less than ? 1dB.3.This paper designs a S-band wideband power amplifier,which is to verify the applicability of the transistor by adopting the multi-branch T type matching network structure in the S band.The working band of the design index is 2 ~ 4GHz,the output power is greater than 60 W,the power added efficiency is greater than 45%,the large signal gain is greater than 8dB,the gain flatness is less than ? 1dB. |
