Study On Key Technologies Of RF Power Amplifier And Impedance Matching In Vacuum Sputtering System

RF power supply is a special power source matching RF plasma powersupply,which is a new high technology emerged in the late eighty years. And it shows abroad application prospect, widely applied in the electronics,especially in RFdischarge,RF sputtering，optical thin and semiconductor industry.At present，thedevelopment of domestic power supply technology is relatively slow. Design method ofthe high power RF power is still based on electron tubes as RF power amplifier module.Because of disadvantages of low efficiency and poor stability of RF power andimpedance matching slow，a study of low-power, high efficiency and good stabilityRF power supply and impedance matching intelligent optimization algorithm has beinga hot research topic.This article aiming at theinfluenceofRF power inefficiencypoor stability, impedancematching slowly and low accuracy or other key technical problems. The articleproposed a new way, which combined with the key points of technical index andimpedancematching of RF power supply. This paper mainly studied on the factorsaffecting the stability of the power conversion efficiency and frequency for RF power invacuum sputtering deposition.The operating characteristics of class E power amplifiersand RF circuit were analyzed. Get the optimal duty cycle by deducing the maximumoutput power formal which is normalized within Matlab. The circuit simulated byCadence and PSpice with using AmericanMicrosemi DRF1200power MOSFET chip asthe core devicewhich can generate1KW CW of RF output at13.56MHz. Theexperiment results showed that RF power circuit was reasonable throughthe data of SY500W/13.56W RF power and simulation data.The article put forward a kind of automatic impedance matching algorithms(Quantum Particle Swarm Optimization). By controlling parameter changes linearlywith the number of iterations reduced, and simulated within using Matlab, we found thatthe amplitude of reflection coefficient is less than0in0.1s.It achieved impedancematching exactly, which fluctuations in the reflection coefficient and high precisionmatching system.It provided a theoretical reference and technical support for the RFpower in vacuum sputtering system.