Research On The Modeling And Simulation Of RF Integrated Capacitors

Radio frequency integrated circuit(RFIC),which belongs to Analog integrated circuit(Analog integrated circuit(analog-IC),is an important branch of analog-IC.It processes Radio frequency electrical signals and converts them into electromagnetic waves for transmission,which is widely used in wireless Internet of things,mobile phone communication and other fields.At present,the research on the capacitance model of rf integrated circuits is not sufficient.In this paper,three-dimensional(3D)electromagnetic field modeling and simulation are carried out for various structures of MOM capacitors and MIM capacitors.The main contents and conclusions are as follows: The geometric structure and process implementation of MOM and MIM capacitors are described,and the equivalent circuit is analyzed to obtain the equivalent circuit model.Then High Frequency Structure Simulator(HFSS)is used to simulate the 3D electromagnetic field of different capacitance structures under different dimensional characteristics for analyzing the influence of various sizes on capacitance characteristics.The effect of characteristic structure length,width,thickness of MOM capacitance and dielectric constant of dielectric layer on capacitance density are studied.The impedance of the capacitance is analyzed by combining with Y parameters calculated by HFSS simulator.Then the MIM capacitance is simulated by the same 3D electromagnetic field and compared with the simulation result of MOM capacitance.Finally,the HSPICE circuit simulation and HFSS simulation are used to compare and verify the two models.According to the HFSS simulation results,the capacitance density of both MOM capacitance and MIM capacitance is similar in order of magnitude under the same processing dimension of characteristics,but its self-resonant frequency,quality factor characteristic is not as good as that of MIM capacitance.