Design Of MTM Anti-fuse Memory And Programming Method

With high-speed development of space technology and increase manufacturing level of new type military hardware,the performances of equipment is constantly upgrading.And in core control system of High-end equipment,high reliability memories are the important electronic components.Semiconductor nonvolatile memories have the characteristic of keeping the informations under the condition of power down,so these kinds of memories become important electronic components..In new type military hardware,the radiation-resistant ability of memories is very significant.This paper is completed on the base of this kind of circuit research,and has some certain references for the research of radiation-resistant MTM anti-fuse memory.In this paper,the development of MTM anti-fuse memory at home and abroad,the structure of MTM anti-fuse and the memory cell and the operational principle are introduced.And the logic structure of circuit,the technical methods of processing,the research of radiation mechanism and the methods of radiation-resistant are elaborated.Firstly,the structure design and the process of MTM anti-fuse are completed.Through the test,the characteristic of anti-fuse cell before programming and after programming are examined.The memory cells are designed.In consideration of reliability and area,the structure of memory cell is confirmed.Then,the writing and reading modular circuits of memory are designed.Combining the simulation technique,a kind of MTM anti-fuse memory is designed.According to the characteristic of process,the special programmer is manufactured.Through programming test,total ionizing dose and single particle test,the function and performance index meet the requirement of design.This MTM anti-fuse memory has two deficiencies compared with foreign circuits One is the yield of all addresses programming.Foreign circuit yield is over 90%.This memory yield is over 60%.The other is the design of redundancy memory.Foreign circuits have this design to test,optimize the circuits and find out the best programming condition.This MTM anti-fuse memory has no the design of redundancy memory because the circuit area is limited.The two deficiencies is to be improved in the prospective work.