Design Of High Reliability Anti-fuse PROM And Study Of Its Device Irradiation Performance

With the continuous development of human space exploration,satellites,space stations and detectors are more and more active in the vast universe.The work of this machines cannot be separated from the function of integrated circuits.Memory as an important type of integrated circuit is widely used in this spacecraft.However,the integrated circuit will be affected by cosmic radiation,resulting in a series of radiation effects,and the function of the integrated circuit will be affected or even invalid.The anti-fuse PROM is a kind of memory with irradiation resistance,The MTM antifuse PROM designed in this thesis has good compatibility with CMOS process,high reliability,and irradiation resistance.In this thesis,the type of anti-fuse storage unit is analyzed and MTM anti-fuse is selected as the storage medium.And storage units with two 2T1 C structures are designed based on MTM anti-fuse.The circuit principle and working process of reading systems and programming systems of anti-fuse PROM are designed and analyzed.For the whole circuit and layout design of the PROM,simulation is conducted to its function under different simulation conditions of process corner,temperature and power supply voltage,to verify whether the design of the chip could correctly realize its function within the scope of work conditions.The circuit parameters are obtained by simulation,including the reading resistance threshold,reading time,program voltage rise time and other circuit parameters.At the same time,the annular gate devices,straight gate devices and module circuits were designed and tested,and the performance of annular gate devices was compared with the simulation model used in the simulation,and parameter characteristics of the custom device were acquired.The voltage withstand capability and the function of these devices was tested and the breakdown voltages was statitically analyzed,and the rationality of circuit was verified.This thesis introduces the method of anti-irradiation reinforcement used in PROM.For the effect of annular gate to the total dose effect,some different types of annular gate devices and direct gate devices were selected for the total dose radiation experiments.The experimental data was compared and analyzed to quantitative study the performance on the total ionizing dose effect of annular gate used in the PROM.The irradiation effect of high voltage devices and low voltage devices used in PROM was analyzed through the mid-gap method,the experimental results were simulated by using Sentaurus TCAD.The difference of total ionizing dose effect of high voltage devices and low voltage devices was compared,and a possible reason for this difference was given.In this thesis the design of PROM was introduced roundly.The design principle of PROM was introduced.Before the manufactory of PROM,the devices used in the PROM was manufactured.Test work and irradiation experiment were carried out,provide the basis for the design of the subsequent PROM improvement work.