A Study On Programming Features And Reliability Of Anti-fuse PROM

The memory design technology has been developing in a very high speed this year in China. The universities and institutes have begun to design the core memory-PROM(Programmable Read Only Memory) that are widely used in aerospace and military region by themselves. As we all know, The West World never export PROM to China. This study can break the predicament and meet the requirements in Aerospace and military use. This paper has done great work and study on the Gate Oxide Anti-fuse PROM memory cell.This paper has paid great attention to the programming feature problems and reliability problems. The relations between programming features and programming conditions are adequately studied through the analysis of programming mechanism and test experiments. The best programming condition has been found. A modified 3T memory cell has been put forward to improve the programming consistency of the PROM memory cell. Combined with the reliability theory, the firm lifetime and accelerated lifetime experiments were designed and finished. The reliability of memory cell was evaluated with the method based on the performance parameters degradation. The reliability of the gate-oxide anti-fuse PROM memory cell has been verified Last but not the least, according to the temperature model, the reliability evaluated model of memory cell in any temperature was solved. The model provides a efficient method to deal with the lifetime prediction and reliability assessment of high reliability products under normal and low temperature conditions.In conclusion, The research results have done great theory and engineer contributions to the design and reliability of gate oxide anti-fuse PROM. It is very significant for the design of high performance and reliability PROM.