Analysis Of Transport Properties Of Holes In Process Of Electrochemical Etching Silicon Microchannels

As silicon microchannel array is becoming more and more widely applied in production and living, medical, aerospace and other application fields, the focus on electrochemical corrosion technology with the characteristics of low cost, simple and convenient to prepare the microchannel structure is obviously increased. So, the study on the mechanism of electrochemical corrosion process for silicon microchannel was attracted more attention, and in the process of silicon microchannel electrochemical corrosion, the transport property of the cavity is one of the most important point.In this paper, we expounds the light auxiliary electrochemical corrosion principle of silicon microchannel array carrier transport based on the related characteristics of silicon, illustrated the model that in the semiconductor silicon material carrier transport mechanism, such as impurity scattering mechanism and the principle of lattice vibration scattering mechanism. By changing the position of the light source to control the exposure to the light intensity on the silicon wafers, through the different light intensity of the Mott – Schotty curve to get the corresponding flat band potential, we can draw that by the comparison with the reduction of the light intensity, the flat band potential was negative and also reduced, it also means that the production of the light cavity reduced. Through the comparison and analysis of the relationship between the channel morphology and the correlation cavity transport situation, it is concluded that corrosion of high voltage can lead to cavity transport quantity beyond the required, and low voltage led to transport cavity quantity is not enough, so it is necessary to choose a suitable corrosion voltage, around 0.6 V; By changing the flat band potential, the different temperature conditions is analyzed, it is concluded that the rise of temperature can promote the cavity transport, at the same time the silicon microchannel array morphology which is obtained under different temperature conditions is compared and analyzed, according to the relation between channel morphology and cavity transport situation, it is concluded that high temperature will lead to more cavities beyond the transport needs, and low temperature will lead the lack of cavities, so it is necessary to choose a suitable temperature, about 21℃.