Transport Characteristics In The Proces Of Electrochemical Etching Silicon Microchannel

Electrochemical etching silicon micro channel technology has been widely concerned, but the transport characteristics in electrochemical etching silicon microchannel are rarely reported, however the transport of current carriers in silicon wafer, of silicon/HF interface charge and of material in solution directly influences the etching results of microchannel structure.This paper begins from the basic properties of silicon,combines with the band theory of semiconductor and the theory of charge transfer then expounds the transport principles in process of electrochemical etching silicon microchannels; with n-type (100) wafer monocrystalline silicon as the research object, designs the experiments, and finds out the optimal excitation wavelength for 850nm of current carriers in wafer, and with phosphorus ion implantation process preparation in ohms contact layer can produce more light born cavitation, be helpful for corrosion; building model by microchannel geometric structure, found in top structures gathered, wall carrier by passivation protect channel along the top structures direction grow; discusses the material transport caused by silicon/HF interface charge transport and migration and the diffusion, and the two types of transport critical condition, then analyzes the effects of transport characteristics within different processing conditions by changing voltage, solution concentration etc experimental parameters.