Design Of Low Noise Amplifier Of CMOS And SiGe HBT Process

Due to the demand of application,traditional low noise amplifier always works as the radio frequency receiver front-end.A large number of relevant research results have been accumulated so far.But the research of the low noise amplifier which works beyond the radio frequency still has a lot of work to do.It is meaningful to add related research.In this paper,CMOS process and SiGe BiCMOS process were used to complete two low noise amplifier chips.Low-noise amplifier working in the room temperature readout circuit was designed by CMOS technology and it has successful completion of the tapeout and test.The amplifier includes low noise single to dual circuit,common mode feedback circuit,amplifier circuit and bias circuit.The design goal is to achieve low equivalent input noise at low frequencies,and the circuit is optimized from the choice of module structure and improvement of circuit parameters.In the aspect of theory,it's mainly related to noise analysis and noise reduction methods,it also concluded the conclusion that increasing the input transistor transconductance and reducing the non-input transistor transconductance can reduce the thermal noise in the circuit,and increasing the input transistor area can reduce flicker noise.In the circuit design,low-noise single to dual circuit and differential circuit were used for signal processing;adding ESD protection circuit was to prevent damage to the chip when circuit gets started.In the aspect of layout design,the use of deep N-well technology was to reduce the noise coupling.The SiGe BiCMOS process was used to design the low noise amplifier in the low temperature readout circuit,and the simulation of the low noise amplifier was verified.In order to maintain the gain of the circuit during the temperature drop,the current ratio of the amplifier and the load tube are controlled well.Subject to simulation environment limit,the simulation temperature was set at-40 °,the circuit will be sent to the testing environment of 4.3K to complete the relevant test.The post simulation results of low noise amplifier using SiGe BiCMOS process show that the equivalent input noise is 1.9 w Vrms/(?)at-40 °,the gain is 20.4 dB in the band from 430 kHz to 1.1 GHz and the input impedance is 1.1 K? at the same time.The test results show that the equivalent input noise of low noise amplifier realized by TSMC CMOS is 11.04nVrms/(?)and the gain is 50dB near lOKHz.