Design Of New Ultraviolet Detector And Cmos Readout Circuit For Single Chip Integration

At present, the UV detector on the market have disadvantages with low degree of UV response defects, poor selectivity, low quantum efficiency, large noise, weak sign al detection ability and so on. Because of the laboratory has successfully developed the silicon based detectors, combined with characteristics of CMOS process, based on the theory of semiconductor device physics, study the principles of UV detector. It aimed at improving the sensitivity and selectivity of UV detector. At the same time,provide the new train of thought for the single chip integration ultraviolet detection system and make it be possible.Through the study of theoretical knowledge of typical multi anode UV photodiode and analyzing the simulated data, a novel purple infrared complementary structure of UV detector has been proposed, which have the high sensitivity, high selectivity and low noise photoelectric detection. Different from the traditional ultraviolet detector, an extra IR photodiode which is 15-times than the UV one is added in. It’s in order to make the UV detector and the IR one have the same response in infrared and visible light range.The TCAD simulation of the detector was carried out by Silvaco software, and the results were well done.In this paper, the CMOS readout circuit technology for the novel ultraviolet detector is further studied, and a low power readout circuit structure is designed. The readout circuit adopts the foldable common source common gate structure operational amplifier, detailing the readout circuit parameters of the calculation process, and the input offset voltage, common mode inhibition ratio, power suppression ratio,conversion rate in different circumstances and the noise characteristics, output characteristics are simulated and verified, and the results show that the circuit has high precision, low noise, excellent performance.The standard CMOS process of new UV detector and readout circuit layout is designed and fabricated, realizes the integration of devices and circuits on a single chip, finally completed the testing of the detection system.