Research On High Performance SRAM For Radiation Resistance

With the rapid growth of the aviation industry,Static Random Memory is widely used in space environment,such as spacecraft and space satellite control system.SRAM consume low power and speed fast.The space environment is filled with a variety of radiation-sensitive particles,the resulting radiation have a serious impact on the electronic devices.It damage to the performance and reduced the life of the equipment.With the integrate circuit feature size reduction and integration of the increase,in the space environment in the static random access memory put forward more requirements,that is,to ensure high speed and low consumption at the same time,but also have the ability to resist particle radiation.This paper analyzes the basic working principle of SRAM,and analyzes the influence of space radiation effect on SRAM.Radiation effect is mainly divided into single event effect and total dose effect.Under 0.18 um process,the total dose effect on the device can be ignored.In this paper,the anti-radiation reinforcement design scheme of SRAM is mainly to discuss the single event effect.Firstly,the working mechanism of anti-single event effect of three reinforcement schemes of process-level reinforcement,system strengthening and circuit-level reinforcement is studied and discussed.Cell as the most important part of SRAM,it have effect on the chip area,stability,reliability,power consumption and speed,etc.For this SRAM anti-radiation reinforcement design is mainly for the cell for reinforcement design.Dual Interlocked Storage Cell(DICE)is widely used in the reinforcement of SRAM cells because of its strong resistance to single event upset.However,in the state of reading and writing,DICE structure cell will occur in the case of single event failure.This paper adopts the improved DICE structure of the cell of SRAM.It separates the reading and writing of DICE structure.Secondly,the decoding circuit,pre-charge circuit,sensitive amplification circuit,read and write of SRAM are designed,and the functions of each circuit are verified by simulation.Finally,based on 0.18 um process,completed the 4K * 32 bits SRAM.And completed circuit read and write function verification,anti-radiation performance verification,port and timing design.In addition to complete the module circuit(cell and peripheral circuit)basic functions simulation verification.And achieve the entire circuit layout design.Under the condition of 1.8V voltage,the simulation results show that the SRAM designed in this paper can work normally at 75 MHz frequency and has strong anti-single event effect.