The Design Of Radiation Hardened SRAM

As the development of our space exploration,the anti-radiation integrated circuit can be also more and more important. Memory as an very important part of IC is very vulnerable to single event upset and sigle event latchup and other single events in the radiation environment.The design is an anti-radiation chip by Computer School of National University of Defense Technology. According to the design target, the paper adopts full-custom design, and finished the design of one 64Kb hardened SRAM under the research of the SRAM theory.The main work and contributions include:1) the paper studies the theories of single event upset and single event latchup. And finds the sensitivity of the ordinary SRAM to the single event by simulation. On this basis, conclude kinds of the hardened technologies.2) Along designing the anti-radiation SRAM, uses the DICE cell structure to harden SEU, the result of the simulation shows that it can be good to the upset. Then on the reinforcement of SEL, base of device simulation results, we use increased the space and an extra touch hole method.3) Fix the size of transistors of the DICE cell. Based on the reinforced method, we completed the SRAM in the schematic and the layout.4) After the design of SRAM, we carried out the layout simulation. Simulation results show that the access latency and power consumption as the same as the ordinary SRAM .5) Complete the timing and physical models extraction of the hardened radiation SRAM.