Study On Technology Of Electrochemical Micromachining Of Silicon Microchannel Array

P-type Silicon crystal plates have been adopted in the text ,which are formed mask SiO2 by heat-oxygenation .And figures are diverted by normal light etching technology . The Silicon plates are formed reverse four wimble array in KOH solution by wet-etching technology .Then the electrochemical etching experiments are done in three poles electrobath .And some technology questions such as heat oxygenation , light etching , wet etching and electrochemical etching have been analyzed .At the same time sample appearances are analyzed by scanning electron microscope .According to current burst model theory , the electrochemical deep holes etching mechanism are analyzed .According to theoretic and experimental investigation , crystal direction has nothing to do with forming square-holes . Pre-Exposure Bake's time has been extended in light etching course for favorable patterns. Etching time has been extended in wet etching course . Circulating device is needed in electrochemical etching course. The consequences are benefit to Silicon electrochemical micromachining technology and the technology will be hopeful to become an new technology about Silicon deep-holes etching technology.