The Formation Of Microchannel Array By Electrochemical Etching

In this paper, P-type silicon crystal plates have been adopted, on which silicon dioxide is formed by heat-oxygenation. In order to assure the channel locations, the figures of the etching windows are diverted onto the mask through light etching technology. We must create inducing pits before electrochemical etching by wet-etching technology, then ohmic contact should be formed on the back of the silicon plates. After all these experiments, the electrochemical etching experiments will be done in three-pole electrobath, and the apparences of the experimental samples are analyzed by scanning electron microscope.According to the theoretic and experimental investigation, the doped concentration of the silicon plates, and the shape of the inducing pits are very important, Before the experiments of the forming of ohmic contact,the silicon plates should be made very clean. In the experiments of electrochemical etching, the proper parameters such as the density of the solution and the voltage should be found.We made some preliminary theoretical and experimental research, the result of the experiments have guiding significance on further studies, and the silicon electrochemical micromaching technology is promised to be a new mignificant technology about the formation of silicon microchannel plates.