| In recent years, the wireless communication technology developed rapidly. With the development of electronic technology, thereby some problems appearing in the low frequency band,such that the spectrum resources appear increasingly crowded. At the same time, with the development of multimedia technology, the requirements of wireless communication system are more and more higher than bebore. Fortunately the millimeter wave(mm-wave)frequency has abundant spectrum resource and it can achieve high data rate transmission. Hence mm-wave technology will bring new vitality and more choices for wireless communication.The 60 GHz technology has advantages of the wide bandwidth, strong anti-interference ability, high safety of transmission, ultra high-speed data transmission capacity and etc. So this technology becomes the direction of next generation wireless communication systems and a hot research topic in the academic and industrial fields. The frequency above 100 GHz can provide wireless transmission data rate that can be up to 10Gb/s and the this systems have the advantages of compact structure which is easy to realize multifunctional integrated application. At those frequencies above 100 GHz, the spectrum resources provide a wide band for the research of wireless communications, and it is expected to become another major direction of future wireless communication system.At present, some universities and research institutions in Europe, the United States, Japan, Taiwan and some big consumer electronics product company have been carrying out research on 60 GHz technology and the frequency above 100 GHz technology. By now they have achieved remarkable results. Recent years, the number of the literatures about 60 GHz and above 100 GHz silicon-based power amplifier has increased significantly, the performances of the circuits are also significantly improved. This thesis summarizes the research progress of 60 GHz and the frequency above 100 GHz silicon-based power amplifiers, discuss the challenges and design methods of silicon-based mm-wave power amplifier. And the 60 GHz CMOS and 150 GHz SiGe BiCOMS power amplifies were researched and designed. Its contents are described as follows:(1) The 60 GHz and the frequency above 100 GHz silicon based power amplifiers were investigated and typical structure and technical indexes of circuits were summarized up in this thesis. To the end of 2013, the 60 GHz CMOS power amplifiers were reported in IEEE have the performances: the saturated output power increases from 8dBm to more than 20 dBm, the gain increases from 5.2dB to near 30 dB, the PAE increased from 7% to more than 25%. Typical indicators of THz sillicon based power amplifiers: the saturation output power is inside 15 d Bm, gain is 10-25 dB, the PAE is generally less than 10%. The optimal index: the highest working frequency is 260GHz; the maximum saturated output power is 13.2dBm; the maximum gain is 24.3dB; the highest PAE 14.6%.(2) The basic theory of power amplifier was discussed,the challenges of silicon-based mm-wave power amplifiers and the design methods of mm-wave amplifier were investigated in this thesis. With the development of silicon based technology, the cutoff frequency f T of active devices has been able to reach 300 GHz, which makes silicon based mm-wave integrated circuit become possible. But adoption of silicon based technology to design mm-wave power amplifier still exists many challenge. First, the active device breakdown voltage is low, which limits the output power. Secondly, in mm-wave band, the loss of the silicon substrate is high, increasing loss of transmission line, so this greatly limits the performance of efficiency and gain. In addition, the accuracy of the device model is not high, thereby it also become a great challenge to the design of millimeter wave power amplifier. In view of these adverse factors, this paper lists some method such as: power synthesis, approaching the cutoff frequency design method, which can solve these challenges to a certain extent,(3)This paper designed a 60 GHz power amplifier based on the TSMC 90 nm CMOS. The transistor gain in millimeter wave band is not enough, so cascode structure was used and in the first stage a paralleled inductance was put between gate-drain of the CS device to resonante off the parasitic capacitance Cgd in the MOS FET to improve the gain. Tape out and test were completed next. At final, the situation of the test performance that is not ideal was analyzed, and the differences between the results of simulation were found out, thus a certain design method were obtained.(4) In addition, this paper summarizes the design of the above methods. A 150 GHz power amplifier based on the IHP 0.13μm SiGe BiCOMS was designed.In the design of the 150 GHZ power amplifier, the differential transformer structure was adopted and power synthesis method was choosed to increase the output power of the amplifier. The Circuit adopts common emitter structure. The baluns were used as the transformation of single-end and double-end, power synthesis, impedance matching, and DC input from the intermediate tap. In the core part of the circuit is symmetric, so it has the better suppress of common mode. Finally the circuit and layout design were completed, optimized and the chip area was 0.19 mm2.This thesis summarized the characteristics, the applications of mm-wave and investigated the 60 GHz CMOS and the frequency above 100 GHz silicon based power amplifier. As well, this thesis discussed the mm-wave silicon based power amplifier design challenges and solutions. Based above, a 60 GHz CMOS power amplifier and a 150 GHz SiGe BiCOMS power amplifier were designed. This lays a foundation of realization of the silicon based mm-wave circuits, especially mm-wave power amplifier. |
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