Development Of A Kind Of DC To 2.8GHz Low Noise MMIC Amplifier Based On Silicon

Monolithic microwave integrated circuit (MMIC), such as monolithic microwave amplifier, is a kind of high-speed device arising with the development of semeconductor technology. They are very important for our nation's modernization and national defence. Almost all the monolithic microwave amplifiers, which are needed by the nation, have to depend on import. In order to satisfy the demand of the native customers, we tried to design and produce a monolithic microwave amplifier, which has the same function parameters as the import one. This amplifier features not only the characteristics of high power gain, wide bandwidth, low noise and little bulk but also has low designing and producing cost.In this paper.we discuss of the design of a kind of monolithic microwave integrated circuits amplifier based on 0.6um silicon bipolar technology.We have introduced all of developing process in details.The basic structure of the circuit is two stage cascade, in which were a CE (common emitter) structure as input and a Darlington structure as output. We analyse the theories about bias, bandwidth, power gain, noise etc,and think about the influence of chip package also. We have designed and simulated the circuit by spectreRF of the Cadence and make the results basically to meet our anticipant target as a result: the 3dB bandwidth of 2.86GHz(Min 2.8GHz), the power gain of 26.09dB(Min 24dB, Max 30dB) at 1.5GHz, the noise figure of 2.04dB (Max 3dB)between 0—2GHz and the ldB compression point of 1.06dBm(Min ldbm).In the later,we introduced layout design and chip parameters of test in details. Finally, the characteristics of the device were analyzed together with the simulation data. The results of test Proved this time design of basic success: the 3dB bandwidth of 3.15GHz(Min 2.8GHz), the power gain of 28.06dB(Min 24dB, Max 30dB) at 1.5GHz, the noise figure of 2.17dB (Max 3dB)between 0—2GHz.