The Research On Design Technology Of Ku Band GaN MMIC Power Amplifier

Compared with conventional second-generation semiconductor materials,such as gallium arsenide,which are limited by lower power density,gallium nitride as a third-generation semiconductor material,has a wider band gap,faster electron saturation rate and higher breakdown electric field.The microwave monolithic integrated circuit(MMIC)designed based on GaN has the characteristics of high working voltage,high output power,high efficiency,low bandwidth,low loss,small volume and strong antiradiation capability,so GaN MMIC has become a hot research institute at home and abroad.In this paper,a 100 nm GaN process is used to design a GaN MMIC power amplifier which can work in ku-band.This paper first analyzes and discusses three aspects including the development process of microwave monolithic integrated circuit in materials and technology,MMIC process and some commonly used passive devices,MMIC power amplifier basic theory.Then the development process of the amplifier design process,transistor size design,program design,the design principle of each module circuit and the design method of the corresponding schematic and layout are described in detail.The design uses a 3-stage balanced amplifier circuit topology.By the ADS Momentum Microwave simulating,in the 14-16 GHz frequency range,in VDS=12V,VGS=-1V,Pin=17dBm conditions,the power amplifier meets the necessary and sufficient condition of absolute stability.The small signal gain is greater than 26 dB.The gain flatness is less than 1dB.The input voltage standing wave ratio is less than 1.5.The power additional efficiency is greater than 31%.The saturated output power is greater than 39 dBm.The power additional efficiency at the center frequency is up to 37%.The output power is up to 40 dBm.The chip size is 3.4×2.3mm2.