Millimeter-Wave GaN MMIC Power Amplifier

Millimeter wave has become a research hotspot of communication system network because of its available frequency bandwidth,large information capacity and high-speed transmission.It also has military features,such as its confidentiality and anti-interference ability,and its ability to work around the clock.Significance.In view of the high electron mobility,high electron saturation rate and high power density of GaN high electron mobility transistors(GaN HEMTs),GaN HEMT-based millimeter-wave monolithic microwave integrated circuit(MMIC)power amplifiers are also available.It has become the focus of research in the field of solid-state microwave devices.Therefore,this paper focuses on the design method of high efficiency millimeter wave GaN MMIC power amplifier.The main work and innovations are as follows:1.In view of the difficulty of traditional distributed power amplifier(DPA)in achieving high efficiency at the high-end of millimeter wave,this paper proposes a non-uniform distributed power amplifier(NDPA)that can improve the power added efficiency(PAE)of the millimeter wave band.In order to improve the PAE of NDPA,an inductor(L)is connected in parallel with the drain of the first-stage transistor,and the inductor and the drain-source capacitance(Cds)of the transistor form a parallel resonant circuit(L-Cds).By adjusting the resonant frequency of the L-Cds resonant network,the cutoff frequency of the drain transmission line can be optimized,thereby reducing the drain transmission line loss and improving the PAE of the NDPA.Finally,a power amplifier covering 9-40 GHz was fabricated based on a silicon(Si)based 0.1 ?m AlGaN/GaN double heterojunction field effect transistor(DHFET)process.The test showed that the amplifier has an output power greater than 1 W over the entire range of 9-40 GHz.The PAE is greater than 11%,the peak PAE is 19%,and the power gain is greater than 7 dB,which verifies the correctness of the above design method.2.In order to improve the PAE of current W-band GaN MMIC power amplifiers,this paper is based on a new planar space power synthesis network.By reducing the compensation capacitance and the drain bias line in parallel,the insertion loss of the final matching synthesis network is reduced.PAE of the power amplifier.Due to the process update,there is a certain gap between simulation and testing.In this paper,the new process 4x30?m transistor is modeled.The test results show that the amplifier has an output power greater than 30 dBm in the 90-94 GHz band,a power gain greater than 8dB,and a peak power added efficiency of 19%.3.Aiming at the problem that the current V-band MMIC power amplifier output power is not high and the efficiency is not high,this paper designs a 59-61 GHz power amplifier based on the domestic GaN process technology using bus-bar structure.Due to the process update,there is a big gap between simulation and testing.In this paper,the new process 4x50?m transistor is modeled.The test results show that the amplifier has an output power greater than 33 dBm in the 59-62 GHz band,a power gain greater than 5dB,and a peak power added efficiency of 13%.