| Due to good performance and high reliability, broadband power GaAs MMICs are widely used in military area including satellite communication,airborne radar,guided missile system and other weapon systems. This dissertation introduces the research process of a broadband GaAs power MMIC. The structure of lossy matching amplifier is introduced to realize a wider frequence band. Good performance of high gain and high output power has been achieved by a power combination technique using a three stage amplifier. The MMIC has been fabricated using a 0.35μm GaAs power HFET process. Also it discusses the structure of some common wide-band amplifier and introduces some key technologies such as the modeling design, the process technology and testing technology of GaAs MMIC.The chip has been fabricated at the 3 inch foundry of HSRI. The average performance of the power amplifier is 23dB power gain, 35dBm output saturation power, 1dB compressed output power of 34dBm, 20% power-added efficiency and less than 2.5:1 VSWR from 2 to 6GHz. The wide band and large output power make it useful in many wide-band microwave applications. |
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