The Search Of MMIC Power Amplifier Based On The GaAs Material

The development level and scale of Microelectronics is an important symbol in the comparison of national technical strength. As the continually develop of the semiconductor technology, the monolithic microwave integrated circuit is used widely because of its smaller volume, lower cost, lower noise, lower power consumption and higher reliability. MMIC is the key component in microwave and millimeter-wave communication, surveying and mapping systems. Microwave power amplifiers have wide applications in the fields of satellite communications,radar and electronic countermeasures, the design technology of MMIC microwave power amplifier is one of frontier- technologies in electronic countermeasures.At modem times,the power amplifier has a decisive role in the wireless communication systems. Millimeter power amplifiers are needed for new generations of commercial and military communication systems. Emerging commercial wireless applications have significantly increased the activity in developing power amplifiers. Power amplifiers(PAs) are one of the most important components in radar and communications systems。In Ga As/Ga As pseudomorphic high electron mobility transistors(p HEMTs) have the advantages of possessing high power densities with high gain, which are ideal for applications requiring high efficiency, high power, broadband operations, and small dimensions such as active phase radars, future cellular,local multipoint distribution service(LMDS), and satellite communications. The fabrication of the monolithic microwave integrated circuits(MMICs) for PAs with multistage configuration can further reduce the chip dimension and increase the small-signal gain to reduce manufacturing cost.This paper is titled as “The search of MMIC power amplifier based on the Ga As material”, in which a MMIC power amplifier based on the Ga As material work in 9.5-13.3 GHz is studied and realized. The abstract of the specific content is as follows:1. This paper briefly introduces the background of MMIC and the domestic and foreign research dynamic, and the basic theory and the mainly qualification of the power amplifier is also recommend.2. Based on the analysis of the Ga As PHEMT devices’ working principle, and introduces its simple technological process, finally the small signal equivalent circuit model of various parameters on the extraction methods are simply stated.3. Aimed at the main passive components in monolithic microwave integrated circuits, analyses its equivalent circuit model and the physical significance of the various parameters.4. This paper introduces the basic design idea of power amplifier, and the chip is tested in two styles and the result indicates that in the working band.